Global SiC and GaN Power Devices Industry Size, Market Share, Price and Growth Rate Research Report 2026
On Jan 28, Global Info Research released "Global SiC and GaN Power Devices Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032". This report includes an overview of the development of the SiC and GaN Power Devices industry chain, the market status of SiC and GaN Power Devices Market, and key enterprises in developed and developing market, and analysed the cutting-edge technology, patent, hot applications and market trends of SiC and GaN Power Devices.
According to our (Global Info Research) latest study, the global SiC and GaN Power Devices market size was valued at US$ 6893 million in 2025 and is forecast to a readjusted size of US$ 25140 million by 2032 with a CAGR of 20.5% during review period.
This report studies the GaN Power Devices and SiC Power Devices. In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices. Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
The global GaN and SiC Power Semiconductor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN and SiC Power Semiconductor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2020-2031.
This report is a detailed and comprehensive analysis for global SiC and GaN Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request SiC and GaN Power Devices
https://www.globalinforesearch.com/reports/3355093/sic-and-gan-power-devices
Market segment by Type: SiC Power Devices、 GaN Power Devices
Market segment by Application: Automotive & Mobility、 EV Charging、 Consumer Electronics、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Defense & Aerospace、 Others
Major players covered: onsemi、 STMicroelectronics、 Infineon (GaN Systems)、 Wolfspeed、 BYD Semiconductor、 Bosch、 United Nova Technology、 Innoscience、 Navitas (GeneSiC)、 Guangdong AccoPower Semiconductor、 Rohm、 San'an Optoelectronics、 Efficient Power Conversion Corporation (EPC)、 Power Integrations, Inc.、 Semikron Danfoss、 Mitsubishi Electric、 BASiC Semiconductor、 Fuji Electric、 SemiQ、 PN Junction Semiconductor (Hangzhou)、 Zhuzhou CRRC Times Electric、 InventChip Technology、 Microchip (Microsemi)、 CETC 55、 Toshiba、 WeEn Semiconductors、 Littelfuse (IXYS)、 Renesas Electronics (Transphorm)、 Yangzhou Yangjie Electronic Technology、 Vishay Intertechnology、 China Resources Microelectronics Limited、 Nexperia、 SK powertech、 Texas Instruments、 Alpha & Omega Semiconductor、 SanRex、 StarPower、 Changzhou Galaxy Century Microelectronics、 GE Aerospace、 Hangzhou Silan Microelectronics、 KEC、 PANJIT Group、 Diodes Incorporated
Market segment by region, regional analysis covers:
North America (United States, Canada and Mexico),
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),
South America (Brazil, Argentina, Colombia, and Rest of South America),
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC and GaN Power Devices, with price, sales, revenue and global market share of SiC and GaN Power Devices from 2021 to 2025.
Chapter 3, the SiC and GaN Power Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2021 to 2025.and SiC and GaN Power Devices market forecast, by regions, type and application, with sales and revenue, from 2026 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC and GaN Power Devices.
Chapter 14 and 15, to describe SiC and GaN Power Devices sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
According to our (Global Info Research) latest study, the global SiC and GaN Power Devices market size was valued at US$ 6893 million in 2025 and is forecast to a readjusted size of US$ 25140 million by 2032 with a CAGR of 20.5% during review period.
This report studies the GaN Power Devices and SiC Power Devices. In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices. Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
The global GaN and SiC Power Semiconductor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN and SiC Power Semiconductor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2020-2031.
This report is a detailed and comprehensive analysis for global SiC and GaN Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Sample Report Request SiC and GaN Power Devices
https://www.globalinforesearch.com/reports/3355093/sic-and-gan-power-devices
Market segment by Type: SiC Power Devices、 GaN Power Devices
Market segment by Application: Automotive & Mobility、 EV Charging、 Consumer Electronics、 Industrial Motor/Drive、 PV, Energy Storage, Wind Power、 UPS, Data Center & Server、 Rail Transport、 Defense & Aerospace、 Others
Major players covered: onsemi、 STMicroelectronics、 Infineon (GaN Systems)、 Wolfspeed、 BYD Semiconductor、 Bosch、 United Nova Technology、 Innoscience、 Navitas (GeneSiC)、 Guangdong AccoPower Semiconductor、 Rohm、 San'an Optoelectronics、 Efficient Power Conversion Corporation (EPC)、 Power Integrations, Inc.、 Semikron Danfoss、 Mitsubishi Electric、 BASiC Semiconductor、 Fuji Electric、 SemiQ、 PN Junction Semiconductor (Hangzhou)、 Zhuzhou CRRC Times Electric、 InventChip Technology、 Microchip (Microsemi)、 CETC 55、 Toshiba、 WeEn Semiconductors、 Littelfuse (IXYS)、 Renesas Electronics (Transphorm)、 Yangzhou Yangjie Electronic Technology、 Vishay Intertechnology、 China Resources Microelectronics Limited、 Nexperia、 SK powertech、 Texas Instruments、 Alpha & Omega Semiconductor、 SanRex、 StarPower、 Changzhou Galaxy Century Microelectronics、 GE Aerospace、 Hangzhou Silan Microelectronics、 KEC、 PANJIT Group、 Diodes Incorporated
Market segment by region, regional analysis covers:
North America (United States, Canada and Mexico),
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe),
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia),
South America (Brazil, Argentina, Colombia, and Rest of South America),
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa).
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC and GaN Power Devices, with price, sales, revenue and global market share of SiC and GaN Power Devices from 2021 to 2025.
Chapter 3, the SiC and GaN Power Devices competitive situation, sales quantity, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and application, with sales market share and growth rate by type, application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value and market share for key countries in the world, from 2021 to 2025.and SiC and GaN Power Devices market forecast, by regions, type and application, with sales and revenue, from 2026 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC and GaN Power Devices.
Chapter 14 and 15, to describe SiC and GaN Power Devices sales channel, distributors, customers, research findings and conclusion.
Data Sources:
Via authorized organizations:customs statistics, industrial associations, relevant international societies, and academic publications etc.
Via trusted Internet sources.Such as industry news, publications on this industry, annual reports of public companies, Bloomberg Business, Wind Info, Hoovers, Factiva (Dow Jones & Company), Trading Economics, News Network, Statista, Federal Reserve Economic Data, BIS Statistics, ICIS, Companies House Documentsm, investor presentations, SEC filings of companies, etc.
Via interviews. Our interviewees includes manufacturers, related companies, industry experts, distributors, business (sales) staff, directors, CEO, marketing executives, executives from related industries/organizations, customers and raw material suppliers to obtain the latest information on the primary market;
Via data exchange. We have been consulting in this industry for 16 years and have collaborations with the players in this field. Thus, we get access to (part of) their unpublished data, by exchanging with them the data we have.
From our partners.We have information agencies as partners and they are located worldwide, thus we get (or purchase) the latest data from them.
Via our long-term tracking and gathering of data from this industry.We have a database that contains history data regarding the market.
About Us:
Global Info Research
Web: https://www.globalinforesearch.com
Email: report@globalinforesearch.com
Global Info Research is a company that digs deep into global industry information to support enterprises with market strategies and in-depth market development analysis reports. We provides market information consulting services in the global region to support enterprise strategic planning and official information reporting, and focuses on customized research, management consulting, IPO consulting, industry chain research, database and top industry services. At the same time, Global Info Research is also a report publisher, a customer and an interest-based suppliers, and is trusted by more than 30,000 companies around the world. We will always carry out all aspects of our business with excellent expertise and experience.
